| PART |
Description |
Maker |
| FDD6N20TM |
N-Channel UniFETTM MOSFET 200V, 4.55A, 800m
|
Fairchild Semiconductor
|
| FDA70N20 |
N-Channel UniFETTM MOSFET 200V, 70A, 35m
|
Fairchild Semiconductor
|
| FDD4N60NZ |
N-Channel UniFETTM II MOSFET 600V, 3.4A, 2.5
FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 ?
|
Fairchild Semiconductor
|
| FDPF15N65YDTU FDPF15N65 |
N-Channel UniFETTM MOSFET 650V, 15A, 440 m
N-Channel UniFETTM MOSFET 650 V, 15 A, 440 m?
|
Fairchild Semiconductor
|
| FQU12N20L FQD12N20L FQU12N20 FQD12N20LTF FQD12N20L |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STY100NS20FD 7739 |
N-CHANNEL Power MOSFET
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET
From old datasheet system
N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FDD18N20LZ |
N-Channel UniFETTM MOSFET
|
Fairchild Semiconductor
|
| FDD7N25LZTM FDD7N20LZ FDD7N25LZ |
N-Channel UniFETTM MOSFET 250V, 6.2A, 550m
N-Channel UniFET MOSFET
|
Fairchild Semiconductor
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| IRF630S 6059 |
From old datasheet system
N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| FDD8N50NZTM FDD8N50NZ |
N-Channel UniFETTM II MOSFET 500V, 6.5A, 850m
|
Fairchild Semiconductor
|
